Allgemein
| Capacitance @ Vr, F | 5pF @ 4V, 1MHz |
|---|---|
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 780 ns |
| Technologie | Standard |
Vishay General Semiconductor - Diodes Division
MSE1PBHM3/I
DatenblattAnalog & Leistungselektronik
DIODE GEN PURP 100V 1A MICROSMP
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | MicroSMP |
| Hersteller-Gehäuse | MicroSMP (DO-219AD) |
Umwelt
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |