Allgemein
| Basis-Teilenummer | FESE8 |
|---|---|
| Capacitance @ Vr, F | 85pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Standard |

Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO220AC
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | FESE8 |
|---|---|
| Capacitance @ Vr, F | 85pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 8 A |
| Current - Average Rectified (Io) | 8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 300 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | TO-220-2 |
|---|---|
| Hersteller-Gehäuse | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|