Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A DO214AA
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | ESH2 |
|---|---|
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 25 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 930 mV @ 2 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-214AA, SMB |
|---|---|
| Hersteller-Gehäuse | DO-214AA (SMB) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |