Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO213AB
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | EGL41 |
|---|---|
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Serie | SUPERECTIFIER® |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | DO-213AB, MELF (Glass) |
| Hersteller-Gehäuse | DO-213AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
|---|