Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 3A SOD64
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | BYW82 |
|---|---|
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Tape & Box (TB) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 7.5 µs |
| Technologie | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | SOD-64, Axial |
|---|---|
| Hersteller-Gehäuse | SOD-64 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|