Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 120V 250MA DO35
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | BAY80 |
|---|---|
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Obsolet |
| Reverse Recovery Time (trr) | 50 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.07 V @ 150 mA |
| Current - Average Rectified (Io) | 250mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 120 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-204AH, DO-35, Axial |
|---|---|
| Hersteller-Gehäuse | DO-204AH (DO-35) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | 175°C (Max) |
| Qualification | AEC-Q101 |