Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1.8A TO277A
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | AR3 |
|---|---|
| Capacitance @ Vr, F | 44pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Discontinued at |
| Reverse Recovery Time (trr) | 140 ns |
| Serie | eSMP® |
| Technologie | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Average Rectified (Io) | 1.8A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | TO-277, 3-PowerDFN |
|---|---|
| Hersteller-Gehäuse | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|