Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1A DO220AA
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | AR1 |
|---|---|
| Capacitance @ Vr, F | 8.5pF @ 4V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 120 ns |
| Serie | eSMP® |
| Technologie | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-220AA |
|---|---|
| Hersteller-Gehäuse | DO-220AA (SMP) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -55°C ~ 175°C |
| Qualification | AEC-Q101 |