Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 114A 658W 12MTP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 50MT060 |
|---|---|
| Konfiguration | Half Bridge |
| IGBT Type | PT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 7.1 nF @ 30 V |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Chassis Mount |
| NTC Thermistor | No |
| Teilestatus | Obsolet |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 100A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 114 A |
| Current - Collector Cutoff (Max) | 400 µA |
| Power - Max | 658 W |
| Package / Case | 12-MTP Module |
|---|---|
| Hersteller-Gehäuse | 12-MTP |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|