Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA DO35
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 1N914 |
|---|---|
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Cut Tape (CT) Tape & Box (TB) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 4 ns |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Current - Average Rectified (Io) | 300mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-204AH, DO-35, Axial |
|---|---|
| Hersteller-Gehäuse | DO-204AH (DO-35) |
| Grade | Automotive |
|---|---|
| Operating Temperature - Junction | -65°C ~ 175°C |
| Qualification | AEC-Q101 |