Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 2A SOD57
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 1N5062 |
|---|---|
| Capacitance @ Vr, F | 40pF @ 0V, 1MHz |
| Hersteller | Vishay General Semiconductor - Diodes Division |
| Montageart | Through Hole |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 4 µs |
| Technologie | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | SOD-57, Axial |
|---|---|
| Hersteller-Gehäuse | SOD-57 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|