Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| Hersteller | UnitedSiC |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Drain-Source-Spannung | 750 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 37.4A (Tc) |
| Max. Verlustleistung | 203W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|