Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 58mOhm @ 20A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Hersteller | UnitedSiC |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Max. Verlustleistung | 125W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-PowerTSFN |
| Hersteller-Gehäuse | 4-DFN (8x8) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|