Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
|---|---|
| Basis-Teilenummer | UF3C120080 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V |
| Hersteller | UnitedSiC |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | SiCFET (Cascode SiCJFET) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28.8A (Tc) |
| Max. Verlustleistung | 190W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Hersteller-Gehäuse | D2PAK-7 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|