Allgemein
| Ausgangskonfiguration | Phototransistor |
|---|---|
| Hersteller | TT Electronics/Optek Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Sensing Distance | 0.155" (3.94mm) |
| Sensing Method | Through-Beam |
| Typ | Unamplified |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Ausgangskonfiguration | Phototransistor |
|---|---|
| Hersteller | TT Electronics/Optek Technology |
| Montageart | Through Hole |
| Product Status | Active |
| Sensing Distance | 0.155" (3.94mm) |
| Sensing Method | Through-Beam |
| Typ | Unamplified |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
|---|---|
| Current - Collector (Ic) (Max) | 30 mA |
| Current - DC Forward (If) (Max) | 50 mA |
| Gehäuse | Bulk |
|---|---|
| Package / Case | PCB Mount |
| Betriebstemperatur | -40°C~85°C |
|---|