Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| Hersteller | Transphorm |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Max. Verlustleistung | 81W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | 4-PowerDFN |
| Hersteller-Gehäuse | PQFN (8x8) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|