Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
| Hersteller | Transphorm |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Max. Verlustleistung | 65W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220AB |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|