Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.4A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| Hersteller | Transphorm |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Max. Verlustleistung | 13.2W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-SMD, Flat Lead |
| Hersteller-Gehäuse | 3-PQFN (5x6) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|