Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| Hersteller | Transphorm |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Max. Verlustleistung | 21W (Tc) |
| Gehäuse | Cut Tape (CT) Tube |
|---|---|
| Package / Case | 3-PowerDFN |
| Hersteller-Gehäuse | 3-PQFN (8x8) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|