Allgemein
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Hersteller | Transphorm |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Technologie | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |