Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Hersteller | Transphorm |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | SuperGaN® |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Max. Verlustleistung | 119W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|