Toshiba Semiconductor and Storage
MOSFET N-CH 60V 110A 8SOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 55A, 10V |
|---|---|
| Basis-Teilenummer | XPH2R106 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, U-MOSVIII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Max. Verlustleistung | 960mW (Ta), 170W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.197", 5.00mm Width) |
| Hersteller-Gehäuse | 8-SOP Advance (5x5) |
| Betriebstemperatur | 175°C |
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