Toshiba Semiconductor and Storage
SICFET N-CH 1200V 36A TO3P
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
|---|---|
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | ±25V, -10V |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Max. Verlustleistung | 272W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P(N) |
| Betriebstemperatur | -55°C~175°C |
|---|