Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 30MO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2925 pF @ 800 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 5V @ 13mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Max. Verlustleistung | 249W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247 |
| Betriebstemperatur | 175°C |
|---|