Toshiba Semiconductor and Storage
G3 SIC-SBD 650V 4A DFN8X8
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 263pF @ 1V, 1MHz |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Reverse Recovery Time (trr) | 0 ns |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.34 V @ 4 A |
| Current - Average Rectified (Io) | 4A |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Package / Case | 4-VSFN Exposed Pad |
|---|---|
| Hersteller-Gehäuse | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
|---|