Toshiba Semiconductor and Storage
MOSFET N-CH 100V 9.4A 8TSON
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4.7A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVIII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Max. Verlustleistung | 700mW (Ta), 27W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-TSON Advance (3.3x3.3) |
| Betriebstemperatur | 150°C(TJ) |
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