Allgemein
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |

Toshiba Semiconductor and Storage
IPD MOSFET IC WSON10 PD=1.84W VD
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Channel Type | Single |
|---|---|
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Number of Drivers | 1 |
| Product Status | Active |
| Current - Peak Output (Source, Sink) | 5mA |
|---|---|
| Logic Voltage - VIL, VIH | 0.6V, 2.4V |
| Versorgungsspannung | 5.75V ~ 26V |
| Gehäuse | Tube |
|---|---|
| Package / Case | 10-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 10-WSON (3x3) |
| Betriebstemperatur | -40°C~125°C(TJ) |
|---|