Toshiba Semiconductor and Storage
MOSFET P-CH 32V 5.5A PS-8
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Obsolet |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 32 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Max. Verlustleistung | 2.14W (Ta) |
| Package / Case | 8-SMD, Flat Lead |
|---|---|
| Hersteller-Gehäuse | PS-8 |
| Betriebstemperatur | 150°C (TJ) |
|---|