Allgemein
| Rds On (Max) @ Id, Vgs | 18mOhm @ 4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |