Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2.7A VS-8
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 4.5V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Max. Verlustleistung | 330mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SMD, Flat Lead |
| Hersteller-Gehäuse | VS-8 (2.9x1.5) |
| Betriebstemperatur | 150°C (TJ) |
|---|