Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 4A/3.2A VS-8
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 10V |
|---|---|
| Basis-Teilenummer | TPCF8402 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.2A |
| Power - Max | 330mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SMD, Flat Lead |
| Hersteller-Gehäuse | VS-8 (2.9x1.5) |
| Betriebstemperatur | 150°C (TJ) |
|---|