Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 6A/4.5A 8SOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 26mOhm @ 3A, 10V |
|---|---|
| Basis-Teilenummer | TPC8405 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A, 4.5A |
| Power - Max | 450mW |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Hersteller-Gehäuse | 8-SOP (5.5x6.0) |
| Betriebstemperatur | 150°C (TJ) |
|---|