TPC8227-H,LQ

Name: TPC8227-H,LQ
Brand: Toshiba Semiconductor and Storage

Analog & Leistungselektronik

MOSFET 2N-CH 40V 5.1A 8SOP

Aktiv8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Basis-Teilenummer	TPC8227
Konfiguration	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Hersteller	Toshiba Semiconductor and Storage
Montageart	Surface Mount
Product Status	Active
Serie	U-MOSVI-H
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3V @ 100µA

Drain-Source-Spannung	40V
Current - Continuous Drain (Id) @ 25°C	5.1A
Power - Max	1.5W (Ta)

Betriebstemperatur	150°C