TPC8211(TE12L,Q,M)

Name: TPC8211(TE12L,Q,M)
Brand: Toshiba Semiconductor and Storage

Analog & Leistungselektronik

MOSFET 2N-CH 30V 5.5A 8SOP

Obsolet8-SOIC (0.173", 4.40mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	36mOhm @ 3A, 10V
Basis-Teilenummer	TPC8211
Konfiguration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 10V
Hersteller	Toshiba Semiconductor and Storage
Montageart	Surface Mount
Product Status	Obsolete
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 1mA

Drain-Source-Spannung	30V
Current - Continuous Drain (Id) @ 25°C	5.5A
Power - Max	450mW

Betriebstemperatur	150°C (TJ)