Toshiba Semiconductor and Storage
MOSFET N-CH 30V 12A 8SOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 6A, 10V |
|---|---|
| Basis-Teilenummer | TPC8038 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | U-MOSV-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Hersteller-Gehäuse | 8-SOP (5.5x6.0) |
| Betriebstemperatur | 150°C (TJ) |
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