Toshiba Semiconductor and Storage
MOSFET P-CH 30V 5A VS-6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | U-MOSIII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Max. Verlustleistung | 700mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Hersteller-Gehäuse | VS-6 (2.9x2.8) |
| Betriebstemperatur | 150°C (TJ) |
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