Toshiba Semiconductor and Storage
MOSFET N-CH 900V 9A TO3P
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Drain-Source-Spannung | 900 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Max. Verlustleistung | 250W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P(N) |
| Betriebstemperatur | 150°C (TJ) |
|---|