Toshiba Semiconductor and Storage
MOSFET N-CH 30V 60A DPAK
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Obsolet |
| Serie | U-MOSVI-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Max. Verlustleistung | 63W (Tc) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|---|---|
| Hersteller-Gehäuse | DPAK |
| Betriebstemperatur | 150°C (TJ) |
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