Toshiba Semiconductor and Storage
MOSFET N-CH 60V 50A TO220-3
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
|---|---|
| Basis-Teilenummer | TK50E06 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | U-MOSIV |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Hersteller-Gehäuse | TO-220-3 |