Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A 4DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 98mOhm @ 9.4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | DTMOSIV-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.5mA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Max. Verlustleistung | 240W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 4-VSFN Exposed Pad |
| Hersteller-Gehäuse | 4-DFN-EP (8x8) |
| Betriebstemperatur | 150°C (TJ) |
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