Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A 4DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 300 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | DTMOSIV |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Drain-Source-Spannung | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Max. Verlustleistung | 156W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-VSFN Exposed Pad |
| Hersteller-Gehäuse | 4-DFN-EP (8x8) |
| Betriebstemperatur | 150°C(TJ) |
|---|