TK20J60U(F)

Name: TK20J60U(F)
Brand: Toshiba Semiconductor and Storage

Analog & Leistungselektronik

MOSFET N-CH 600V 20A TO3P

ObsoletTO-3P-3, SC-65-3Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1470 pF @ 10 V
Hersteller	Toshiba Semiconductor and Storage
Montageart	Through Hole
Product Status	Obsolete
Serie	DTMOSII
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 1mA

Drain-Source-Spannung	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Max. Verlustleistung	190W (Tc)

Betriebstemperatur	150°C(TJ)