Allgemein
| Rds On (Max) @ Id, Vgs | 330mOhm @ 8A, 10V |
|---|---|
| Basis-Teilenummer | TK16A55 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | π-MOSVII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |