Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DTM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.9A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | DTMOSIV |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.5V @ 690µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
| Max. Verlustleistung | 139W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-VSFN Exposed Pad |
| Hersteller-Gehäuse | 4-DFN-EP (8x8) |
| Betriebstemperatur | 150°C |
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