Allgemein
| Rds On (Max) @ Id, Vgs | 410mOhm @ 6.8A, 10V |
|---|---|
| Basis-Teilenummer | TK14A45 |
| FET Type | N-Channel |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |

Toshiba Semiconductor and Storage
MOSFET N-CH 450V 13.5A TO220SIS
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 410mOhm @ 6.8A, 10V |
|---|---|
| Basis-Teilenummer | TK14A45 |
| FET Type | N-Channel |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung | 450 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13.5A |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-220SIS |