Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR TO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Serie | DTMOSIV |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Drain-Source-Spannung | 500 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Max. Verlustleistung | 35W (Tc) |
| Package / Case | TO-220-3 Full Pack |
|---|---|
| Hersteller-Gehäuse | TO-220SIS |
| Betriebstemperatur | 150°C |
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