Allgemein
| Rds On (Max) @ Id, Vgs | 103mOhm @ 2A, 10V |
|---|---|
| Basis-Teilenummer | SSM6N815 |
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVIII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |