Toshiba Semiconductor and Storage
MOSFET 2N-CH 100V 3.5A 6TSOPF
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.5A, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 242pF @ 15V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Drain-Source-Spannung | 100V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Power - Max | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Hersteller-Gehäuse | 6-TSOP-F |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |