Toshiba Semiconductor and Storage
MOSFET 2N-CH 60V 0.3A US6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 100mA, 10V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Power - Max | 285mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | US6 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 150°C |
| Qualification | AEC-Q101 |