Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.8A UF6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 85mOhm @ 800mA, 4.5V |
|---|---|
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 177pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Power - Max | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Hersteller-Gehäuse | UF6 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 150°C |
| Qualification | AEC-Q101 |